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Calculation of the localized electronic states associated with static and moving dislocations in silicon

Heggie, M and Jones, R (1983) Calculation of the localized electronic states associated with static and moving dislocations in silicon Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, 48 (4). pp. 379-390.

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Abstract

In this paper we describe the recursion method applied to a parametrized tight-binding Hamiltonian for any cluster of silicon atoms. A new method of dealing with the dangling bonds at the surface of the cluster is described. We direct this new calculation to two typos of defect (the soliton and its vacancy complex) associated with reconstructed partial dislocations and to those configurations, such as kink saddlo points, which are transition states in dislocation motion. A new mechanism for partial dislocation motion is suggested in the light of our results. © 1983 Taylor & Francis Group, LLC.

Item Type: Article
Authors :
NameEmailORCID
Heggie, Mm.heggie@surrey.ac.ukUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Date : 1 January 1983
Identification Number : 10.1080/13642818308246489
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836488

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