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THEORETICAL INTERPRETATION OF DISLOCATION GLIDE IN SILICON.

Heggie, M and Jones, R (1983) THEORETICAL INTERPRETATION OF DISLOCATION GLIDE IN SILICON. Institute of Physics Conference Series (67). pp. 45-53.

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Item Type: Article
Authors :
NameEmailORCID
Heggie, Mm.heggie@surrey.ac.ukUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Date : 1 December 1983
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836486

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