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ELECTRICAL ACTIVITY OF DISLOCATIONS IN SILICON-A REEXAMINATION OF HALL EFFECT DATA.

Heggie, MI (1985) ELECTRICAL ACTIVITY OF DISLOCATIONS IN SILICON-A REEXAMINATION OF HALL EFFECT DATA. Institute of Physics Conference Series (76). pp. 61-66.

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Abstract

Several authors have presented data from the Hall effect in deformed silicon and they have their own interpretations of their results. The mutual incompatibility of these interpretations will be emphasized in this contribution and a possible resolution of the inconsistencies will be proposed. The suggestion is that there are at least two different defects responsible for the electrical activity of dislocations and one of these defects may combine with dopant atoms when the dopant concentration is high relative to the defect concentration to give yet a third level.

Item Type: Article
Authors :
NameEmailORCID
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Date : 1 December 1985
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836482

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