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ARE THERE RECONSTRUCTION SOLITONS AT PARTIAL DISLOCATIONS IN SILICON?

Heggie, M (1986) ARE THERE RECONSTRUCTION SOLITONS AT PARTIAL DISLOCATIONS IN SILICON? Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 51 (4). pp. 61-65.

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Abstract

Deposits may accumulate at dislocation cores and produce additional acceptor levels. This is possible if an acceptor dopant takes up the positions of atoms having three nearest neighbors rather than four. This may imply that solitons occur in reconstructed dislocations.

Item Type: Article
Authors :
NameEmailORCID
Heggie, Mm.heggie@surrey.ac.ukUNSPECIFIED
Date : 1 December 1986
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836479

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