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Planar defects and dissociation of dislocations in a K feldspar

Heggie, MI and Zheng, Y (1987) Planar defects and dissociation of dislocations in a K feldspar Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 56 (5). pp. 681-688.

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Abstract

We investigate some slip systems active in sanidine, the high-temperature form of K feldspar (KAlSi3O8) by atomistic computer modelling of possible dislocation and planar defect structures. As a first approximation, we assume that the disordered Al-SiO2 network behaves as a purely covalent SiO2 network, allowing the use of a Keating-like potential previously fitted to quartz. Our conclusions are that the dissociated screw dislocation in the (010)[001] slip system, with a stacking fault located within the double crankshaft of the Al-SiO4 tetrahedra, is the most energetically favoured dislocation. Also the high energy of the stacking fault on (010) with the displacement vector a/2 makes dissociation difficult and hence makes the appearance of the slip system (010)[100] rare. Both of these findings are in good agreement with observations by electron microscopy. © 1987 Taylor & Francis Group, LLC.

Item Type: Article
Authors :
NameEmailORCID
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Zheng, YUNSPECIFIEDUNSPECIFIED
Date : 1 January 1987
Identification Number : 10.1080/01418618708204481
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836477

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