University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Pinning effect of phosphorus on dislocation cores in silicon

Heggie, M, Jones, R and Umerski, A (1991) Pinning effect of phosphorus on dislocation cores in silicon Institute of Physics Conference Series, 117. pp. 125-128.

Full text not available from this repository.


The interaction of phosphorus with 90 degree partial dislocations in silicon is examined using a cluster method with local density functional pseudopotential theory. We describe several states of phosphorus at dislocation cores which are (i) normally reconstructed and (ii) which contain solitonic reconstructed bonding patterns. Our overall conclusion is that there is a clear tendency for phosphorus to migrate towards the dislocation core, and assume three fold coordination, thus (i) breaking reconstructed bonds across the core and (ii) passivating the solitonic dangling bonds. In each case the P loses its donor characteristic.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Jones, R
Umerski, A
Date : 1 December 1991
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:44

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800