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Theory of dislocations in GaAs

Jones, R, Sitch, P, Oberg, S and Heggie, MI (1994) Theory of dislocations in GaAs Materials Science Forum, 143-4 (pt 3). pp. 1605-1610.

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Abstract

A local density functional cluster method is used to investigate the structure of dislocations in GaAs as well as their interaction with impurities. We find the 90° Ga(g) (β) partial is strongly reconstructed in the same way as in Si, but the As(g) (α) partial is not. This can account for the higher mobility observed for As(g) partials over Ga(g) ones. The influence of impurities on these core structures are discussed.

Item Type: Article
Authors :
NameEmailORCID
Jones, RUNSPECIFIEDUNSPECIFIED
Sitch, PUNSPECIFIEDUNSPECIFIED
Oberg, SUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Date : 1 December 1994
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836469

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