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Structural and electrical properties of threading dislocations in GaN

Elsner, J, Jones, R, Sitch, PK, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1997) Structural and electrical properties of threading dislocations in GaN Materials Science Forum, 258-26 (PART 2). pp. 1203-1210.

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Abstract

The atomic structures and electrical properties for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces. The threading screw dislocations are found to be stable with an open-core whereas the threading edge dislocations possess filled cores.

Item Type: Article
Authors :
NameEmailORCID
Elsner, JUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Sitch, PKUNSPECIFIEDUNSPECIFIED
Frauenheim, TUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Öberg, SUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 1 December 1997
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836464

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