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Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes

Elsner, J, Jones, R, Haugk, M, Gutierrez, R, Frauenheim, T, Heggie, MI, Öberg, S and Briddon, PR (1998) Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes Applied Physics Letters, 73 (24). pp. 3530-3532.

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Local density-functional methods are used to examine the behavior of O and O-related defect complexes on the walls of nanopipes in GaN. We find that O has a tendency to segregate to the (101̄0) surface and identify the gallium vacancy surrounded by three oxygen impurities [VGa-(ON)3] to be a particularly stable and electrically inert complex. We suggest that during Stranski-Krastanow growth, when interisland spaces shrink, these defects reach a critical concentration beyond which further growth is prevented and nanopipes are formed. © 1998 American Institute of Physics.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Elsner, J
Jones, R
Haugk, M
Gutierrez, R
Frauenheim, T
Öberg, S
Briddon, PR
Date : 1 December 1998
DOI : 10.1063/1.122826
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:44

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