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The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen

Gutiérrez, R, Haugk, M, Frauenheim, T, Elsner, J, Jones, R, Heggie, MI, Öberg, S and Briddon, PR (1999) The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen Philosophical Magazine Letters, 79 (2-3). pp. 147-152.

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Abstract

Local density-functional methods are used to examine the behaviour of O and O-related defect complexes at {1010}-type surfaces in GaN. We find that O has a tendency to segregate to the (1010) surface and we identify the gallium vacancy surrounded by three oxygen impurities (VGa-(ON)3) to be a particularly stable and electrically inert complex. We suggest that these complexes impede growth at the walls of the nanopipes preventing them from growing in. Also, other donor-related defect complexes, in particular gallium vacancies surrounded by three silicon atoms as second nearest neighbours, are expected to have the same effect.

Item Type: Article
Authors :
NameEmailORCID
Gutiérrez, RUNSPECIFIEDUNSPECIFIED
Haugk, MUNSPECIFIEDUNSPECIFIED
Frauenheim, TUNSPECIFIEDUNSPECIFIED
Elsner, JUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Öberg, SUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 1 March 1999
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836460

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