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Extended defects in GaN: a theoretical study

Elsner, J, Fraucnheim, T, Haugk, M, Gutierrez, R, Jones, R and Heggie, MI (1999) Extended defects in GaN: a theoretical study Materials Research Society Symposium - Proceedings, 537.

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Abstract

We present density-functional theory studies for a variety of surfaces and extended defects in GaN. According to previous theoretical studies {101̄0} type surfaces are electrically inactive. They play an important role in GaN since similar configurations occur at open-core screw dislocations and nanopipes as well as at the core of threading edge-dislocations. Domain boundaries are found to consist of four-fold coordinated atoms and are also found to be electrically inactive. Thus, except for full-core screw dislocations which possess heavily strained bonds all investigated extended defects do not induce deep states into the band-gap. However, electrically active impurities in particular gallium vacancies and oxygen related defect complexes are found to be trapped at the stress field of the extended defects.

Item Type: Article
Authors :
NameEmailORCID
Elsner, JUNSPECIFIEDUNSPECIFIED
Fraucnheim, TUNSPECIFIEDUNSPECIFIED
Haugk, MUNSPECIFIEDUNSPECIFIED
Gutierrez, RUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Date : 1 December 1999
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836457

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