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Dislocations in hexagonal and cubic GaN

Blumenau, AT, Elsner, J, Jones, R, Heggie, MI, Öberg, S, Frauenheim, T and Briddon, PR (2000) Dislocations in hexagonal and cubic GaN Journal of Physics Condensed Matter, 12 (49). pp. 10223-10233.

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The structure and electronic activity of several types of dislocations in both hexagonal and cubic GaN are calculated using first-principles methods. Most of the stoichiometric dislocations investigated in hexagonal GaN do not induce deep acceptor states and thus cannot be responsible for the yellow luminescence. However, it is shown that electrically active point defects, in particular gallium vacancies and oxygen-related defect complexes, can be trapped at the stress field of the dislocations and may be responsible for this luminescence. For cubic GaN, we find the ideal stoichiometric 60° dislocation to be electrically active and the glide set to be more stable than the shuffle. The dissociation of the latter is considered.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Blumenau, AT
Elsner, J
Jones, R
Öberg, S
Frauenheim, T
Briddon, PR
Date : 11 December 2000
DOI : 10.1088/0953-8984/12/49/322
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 24 Jan 2020 22:43

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