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Theory of dislocations in diamond and silicon and their interaction with hydrogen

Heggie, MI, Jenkins, S, Ewels, CP, J̈emmer, P, Jones, R and Briddon, PR (2000) Theory of dislocations in diamond and silicon and their interaction with hydrogen Journal of Physics Condensed Matter, 12 (49). pp. 10263-10270.

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Abstract

Dislocations in semiconductors can be strongly affected by a hydrogen plasma; core states may be passivated and mobility changed. For example, in silicon the activation barrier for dislocation motion drops by 1.0 eV upon exposure to H plasma for one hour at 470-540 °C. If such an effect were to be found in diamond, a simple scaling argument would yield an activation energy of 1.9 eV. Here, density functional calculations have been applied to the 90° partial dislocation in diamond which confirm this prediction. They also show that, energetically, the soliton model for motion of the 90° partial is as viable as the strained-bond model.

Item Type: Article
Authors :
NameEmailORCID
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Jenkins, SUNSPECIFIEDUNSPECIFIED
Ewels, CPUNSPECIFIEDUNSPECIFIED
J̈emmer, PUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 11 December 2000
Identification Number : 10.1088/0953-8984/12/49/327
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836451

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