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Influence of dislocations on electron energy-loss spectra in gallium nitride

Fall, CJ, Jones, R, Briddon, PR, Blumenau, AT, Frauenheim, T and Heggie, MI (2002) Influence of dislocations on electron energy-loss spectra in gallium nitride Physical Review B - Condensed Matter and Materials Physics, 65 (24). pp. 2453041-2453048.

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Abstract

We report on first-principles calculations of electron energy-loss (EEL) spectra for bulk group-III nitrides and of spatially resolved EEL spectra for a variety of edge and screw dislocations in GaN. The theoretical bulk low-loss EEL spectra, in the 0-10 eV range, are in good agreement with recent experimental data. We find gap states associated with undecorated full-core dislocations that lead to absorption below the bulk onset energy in low-loss EEL spectroscopy. It is also found that the electrostatic potential at N atoms in the vicinity of an edge dislocation varies by an order of a volt and casts doubt on any simple interpretation of core-loss spectroscopy.

Item Type: Article
Authors :
NameEmailORCID
Fall, CJUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Blumenau, ATUNSPECIFIEDUNSPECIFIED
Frauenheim, TUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Date : 15 June 2002
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 17 May 2017 12:42
URI: http://epubs.surrey.ac.uk/id/eprint/836440

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