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Straight and kinked 90° partial dislocations in diamond and 3C-SiC

Blumenau, AT, Fall, CJ, Jones, R, Heggie, MI, Briddon, PR, Frauenheim, T and Öberg, S (2002) Straight and kinked 90° partial dislocations in diamond and 3C-SiC Journal of Physics Condensed Matter, 14 (48). pp. 12741-12747.

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Abstract

Density-functional based calculations are used to investigate low energy core structures of 90° partial dislocations in diamond and 3C-SiC. In both materials dislocation glide is analysed in terms of kink formation and migration and the fundamental steps to kink migration are investigated. We find the C terminated core structure in SiC to be more mobile than the Si core. However, the Si partial is electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.

Item Type: Article
Authors :
NameEmailORCID
Blumenau, ATUNSPECIFIEDUNSPECIFIED
Fall, CJUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Frauenheim, TUNSPECIFIEDUNSPECIFIED
Öberg, SUNSPECIFIEDUNSPECIFIED
Date : 16 December 2002
Identification Number : 10.1088/0953-8984/14/48/311
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 17 May 2017 12:42
URI: http://epubs.surrey.ac.uk/id/eprint/836437

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