Straight and kinked 90° partial dislocations in diamond and 3C-SiC

Blumenau, AT, Fall, CJ, Jones, R, Heggie, MI, Briddon, PR, Frauenheim, T and Öberg, S (2002) Straight and kinked 90° partial dislocations in diamond and 3C-SiC Journal of Physics Condensed Matter, 14 (48). pp. 12741-12747.

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Abstract

Density-functional based calculations are used to investigate low energy core structures of 90° partial dislocations in diamond and 3C-SiC. In both materials dislocation glide is analysed in terms of kink formation and migration and the fundamental steps to kink migration are investigated. We find the C terminated core structure in SiC to be more mobile than the Si core. However, the Si partial is electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.

Item Type:	Article
Authors :	Name Email ORCID Blumenau, AT Fall, CJ Jones, R Heggie, MI m.heggie@surrey.ac.uk Briddon, PR Frauenheim, T Öberg, S
Date :	16 December 2002
DOI :	10.1088/0953-8984/14/48/311
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:42
Last Modified :	17 May 2017 12:42
URI:	http://epubs.surrey.ac.uk/id/eprint/836437

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