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Structure and energy of the 90° partial dislocations in wurtzite-GaN

Savini, G, Heggie, MI, Ewels, CP, Martsinovich, N, Jones, R and Blumenau, AT (2005) Structure and energy of the 90° partial dislocations in wurtzite-GaN Materials Science Forum, 483-48. pp. 1057-1060.

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Abstract

90° Shockley partial dislocations in GaN are investigated by first-principles calculations. This work is focussed on the electrical properties of dislocation cores, and on investigating the electrical fields around these defects. The band structure analysis shows that both the α and β core partials possess a midgap state. The β-core dislocations give rise to a donor level Ev + 0.87 eV that might explain the absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The acceptor level Ev + 1.11 eV localized at the a-core dislocations might contribute to the yellow luminescence. These dislocations experience a substantial charge polarization along the [0001] growth axis. In addition, we show that these dislocations tend to charge in a high stress field.

Item Type: Article
Authors :
NameEmailORCID
Savini, GUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Ewels, CPUNSPECIFIEDUNSPECIFIED
Martsinovich, NUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Blumenau, ATUNSPECIFIEDUNSPECIFIED
Date : 1 December 2005
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 17 May 2017 12:42
URI: http://epubs.surrey.ac.uk/id/eprint/836421

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