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Ab initio investigation of the dislocation structure and activation energy for dislocation motion in silicon carbide.

Sitch, PK, Jones, R, Öberg, S and Heggie, MI (1995) Ab initio investigation of the dislocation structure and activation energy for dislocation motion in silicon carbide. Phys Rev B Condens Matter, 52 (7). pp. 4951-4955.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Sitch, PKUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Öberg, SUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Date : 15 August 1995
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 17 May 2017 12:42
URI: http://epubs.surrey.ac.uk/id/eprint/836416

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