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Hydrogen interaction with dislocations in Si

Ewels, CP, Leoni, S, Heggie, MI, Jemmer, P, Hernandez, E, Jones, R and Briddon, PR (2000) Hydrogen interaction with dislocations in Si Phys Rev Lett, 84 (4). pp. 690-693.

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Abstract

An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.

Item Type: Article
Authors :
NameEmailORCID
Ewels, CPUNSPECIFIEDUNSPECIFIED
Leoni, SUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Jemmer, PUNSPECIFIEDUNSPECIFIED
Hernandez, EUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 24 January 2000
Identification Number : https://doi.org/10.1103/PhysRevLett.84.690
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 17 May 2017 12:42
URI: http://epubs.surrey.ac.uk/id/eprint/836415

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