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Size limit on the phosphorous doped silicon nanocrystals for dopant activation

Yang, P, Gwilliam, RM, Crowell, IF, Papachristodoulou, N, Halsall, MP, Hylton, NP, Hulko, O, Knights, AP, Shah, M and Kenyon, AJ (2013) Size limit on the phosphorous doped silicon nanocrystals for dopant activation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 307. pp. 456-458.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Yang, Ppengyuan.yang@surrey.ac.ukUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Crowell, IFUNSPECIFIEDUNSPECIFIED
Papachristodoulou, NUNSPECIFIEDUNSPECIFIED
Halsall, MPUNSPECIFIEDUNSPECIFIED
Hylton, NPUNSPECIFIEDUNSPECIFIED
Hulko, OUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Shah, MUNSPECIFIEDUNSPECIFIED
Kenyon, AJUNSPECIFIEDUNSPECIFIED
Date : 15 July 2013
Identification Number : 10.1016/j.nimb.2012.12.077
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, Silicon nanocrystals, Phosphorus, Ion implantation, PASSIVATION, EMISSION, SIO2
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:42
Last Modified : 17 May 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/836388

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