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Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

Crowe, IF, Papachristodoulou, N, Halsall, MP, Hylton, NP, Hulko, O, Knights, AP, Yang, P, Gwilliam, RM, Shah, M and Kenyon, AJ (2013) Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation JOURNAL OF APPLIED PHYSICS, 113 (2), ARTN 02430.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Crowe, IF
Papachristodoulou, N
Halsall, MP
Hylton, NP
Hulko, O
Knights, AP
Yang, Ppengyuan.yang@surrey.ac.uk
Gwilliam, RMr.gwilliam@surrey.ac.uk
Shah, M
Kenyon, AJ
Date : 14 January 2013
Identification Number : 10.1063/1.4772947
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, PHOTOLUMINESCENCE EFFICIENCY, ION-IMPLANTATION, THIN-FILMS, PHOSPHORUS, SIO2, IMPROVEMENT, EMISSION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:41
Last Modified : 17 May 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/836330

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