Planar InAs photodiodes fabricated using He ion implantation
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Sandall, I, Tan, CH, Smith, A and Gwilliam, R (2012) Planar InAs photodiodes fabricated using He ion implantation
Full text not available from this repository.Abstract
This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode. © 2012 IEEE.
Item Type: | Conference or Workshop Item (UNSPECIFIED) | |||||||||||||||
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Divisions : | Surrey research (other units) | |||||||||||||||
Authors : |
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Date : | 1 December 2012 | |||||||||||||||
DOI : | 10.1109/IPCon.2012.6358542 | |||||||||||||||
Depositing User : | Symplectic Elements | |||||||||||||||
Date Deposited : | 17 May 2017 12:40 | |||||||||||||||
Last Modified : | 23 Jan 2020 18:01 | |||||||||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/836311 |
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