Planar InAs photodiodes fabricated using He ion implantation

Sandall, I, Tan, CH, Smith, A and Gwilliam, R (2012) Planar InAs photodiodes fabricated using He ion implantation

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Abstract

This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode. © 2012 IEEE.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Sandall, I Tan, CH Smith, A Gwilliam, R r.gwilliam@surrey.ac.uk
Date :	1 December 2012
DOI :	10.1109/IPCon.2012.6358542
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:40
Last Modified :	23 Jan 2020 18:01
URI:	http://epubs.surrey.ac.uk/id/eprint/836311

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