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Planar InAs photodiodes fabricated using He ion implantation

Sandall, I, Tan, CH, Smith, A and Gwilliam, R (2012) Planar InAs photodiodes fabricated using He ion implantation

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Abstract

This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode. © 2012 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sandall, IUNSPECIFIEDUNSPECIFIED
Tan, CHUNSPECIFIEDUNSPECIFIED
Smith, AUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 1 December 2012
Identification Number : 10.1109/IPCon.2012.6358542
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:40
Last Modified : 17 May 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/836311

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