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Nitrogen ion implanted InP based photo-switch

Graham, C, Seeds, A and Gwilliam, R (2012) Nitrogen ion implanted InP based photo-switch Optics Express, 20 (24). pp. 26696-26703.

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Abstract

An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping levels produces a photocarrier recombination time of a few picoseconds. The ion size and mass selected produces uniform bulk point defects in an InGa As light absorbing region leading to high photocurrent mobility not exhibited in heavy ion irradiated samples resulting in a reduced peak pulse power requirement to switch the device. © 2012 Optical Society of America.

Item Type: Article
Authors :
NameEmailORCID
Graham, CUNSPECIFIEDUNSPECIFIED
Seeds, AUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 19 November 2012
Identification Number : https://doi.org/10.1364/OE.20.026696
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:38
Last Modified : 17 May 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/836164

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