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Evaluating InAs QD lasers for space borne applications

O'Driscoll, I, Blood, P, Sobiesierski, A, Gwilliam, R and Smowton, PM (2012) Evaluating InAs QD lasers for space borne applications Conference Digest - IEEE International Semiconductor Laser Conference. pp. 94-95.

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Abstract

Decrease of photoluminescence with increasing dose is due to bombardment induced wetting layer non-radiative recombination. To exploit the relative radiation immunity of QD lasers one should maximise the QD density and capture probability per dot. © 2012 IEEE.

Item Type: Article
Authors :
NameEmailORCID
O'Driscoll, IUNSPECIFIEDUNSPECIFIED
Blood, PUNSPECIFIEDUNSPECIFIED
Sobiesierski, AUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Smowton, PMUNSPECIFIEDUNSPECIFIED
Date : 11 December 2012
Identification Number : 10.1109/ISLC.2012.6348344
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:38
Last Modified : 17 May 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/836163

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