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Structure of Er-related centers in Si

Carey, JD and Priolo, F (1999) Structure of Er-related centers in Si In: 20th International Conference on Defects in Semiconductors (ICDS-20), 1999-07-26 - 1999-07-30, BERKELEY, CA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Carey, JDdavid.carey@surrey.ac.ukUNSPECIFIED
Priolo, FUNSPECIFIEDUNSPECIFIED
Date : 1 December 1999
Identification Number : https://doi.org/10.1016/S0921-4526(99)00474-3
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, erbium doped silicon, electron paramagnetic resonance, defects, optoelectronics, CRYSTALLINE SI, IMPLANTED SI, SILICON
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:37
Last Modified : 17 May 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/836097

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