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Calculations of energy barriers to CVD diamond growth

Latham, CD, Heggie, MI and Jones, R (1992) Calculations of energy barriers to CVD diamond growth In: Diamond Optics V, 1992-07-19 - ?, San Diego.

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Abstract

The growth of thin diamond films by chemical vapor deposition currently in a painfully slow process with highly variable results depending on many experimental parameters. By computer modeling of processes at diamond surfaces using a local density functional cluster method, we have found substantial energy barriers (4 - 6 eV) to growth. Overall, the reactions are strongly exothermic though, thus making them irreversible. The results presented here focus on the addition of methyl radicals and acetylene molecules to {100} 2 X 1 reconstructed surfaces. We propose two possible diamond growth mechanisms in which the relatively weak reconstruction bonds have a crucial role.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Latham, CDchristopher.latham@surrey.ac.ukUNSPECIFIED
Heggie, MIUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Date : 20 December 1992
Identification Number : 10.1117/12.130768
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDFeldman, AUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDHolly, SUNSPECIFIEDUNSPECIFIED
publisherSPIE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:37
Last Modified : 17 May 2017 12:37
URI: http://epubs.surrey.ac.uk/id/eprint/836079

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