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Laser-annealed refractory metal silicide films on GaAs

Anderson, WT, Christou, A, Thompson, PE, Gossett, CR, Eridon, JM, Hatzopoulos, Z, Efthimiopoulos, T, Kudumas, M, Michelakis, C and Morgan, DV (1990) Laser-annealed refractory metal silicide films on GaAs Electronics Letters, 26 (1). pp. 62-64.

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Abstract

A new method of depositing refractory metal silicide films was developed for both Schottky barriers and ohmic contacts to GaAs devices. Pulsed excimer laser annealing of the films was used to lower the gate sheet resistances and in the case of ohmic contacts to remove the interface barrier. Rutherford backscattering analysis showed that interdiffusion induced by laser annealing was reduced with In-doped GaAs compared to undoped GaAs substrates.

Item Type: Article
Authors :
NameEmailORCID
Anderson, WTUNSPECIFIEDUNSPECIFIED
Christou, AUNSPECIFIEDUNSPECIFIED
Thompson, PEUNSPECIFIEDUNSPECIFIED
Gossett, CRUNSPECIFIEDUNSPECIFIED
Eridon, JMUNSPECIFIEDUNSPECIFIED
Hatzopoulos, ZUNSPECIFIEDUNSPECIFIED
Efthimiopoulos, TUNSPECIFIEDUNSPECIFIED
Kudumas, MUNSPECIFIEDUNSPECIFIED
Michelakis, CUNSPECIFIEDUNSPECIFIED
Morgan, DVUNSPECIFIEDUNSPECIFIED
Date : 4 January 1990
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/835729

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