University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Laser-annealed refractory metal silicide films on GaAs

Anderson, WT, Christou, A, Thompson, PE, Gossett, CR, Eridon, JM, Hatzopoulos, Z, Efthimiopoulos, T, Kudumas, M, Michelakis, C and Morgan, DV (1990) Laser-annealed refractory metal silicide films on GaAs Electronics Letters, 26 (1). pp. 62-64.

Full text not available from this repository.


A new method of depositing refractory metal silicide films was developed for both Schottky barriers and ohmic contacts to GaAs devices. Pulsed excimer laser annealing of the films was used to lower the gate sheet resistances and in the case of ohmic contacts to remove the interface barrier. Rutherford backscattering analysis showed that interdiffusion induced by laser annealing was reduced with In-doped GaAs compared to undoped GaAs substrates.

Item Type: Article
Authors :
Anderson, WT
Christou, A
Thompson, PE
Gossett, CR
Eridon, JM
Hatzopoulos, Z
Efthimiopoulos, T
Kudumas, M
Michelakis, C
Morgan, DV
Date : 4 January 1990
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 12:32

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800