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Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels

Papaioannou, G, Roditi, E, Michelakis, C, Martin, E, Hatzopoulos, Z, Papastamatiou, M, Kiriakidis, G, Halkias, G and Christou, A (1990) Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels Superlattices and Microstructures, 8 (3). pp. 341-344.

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Abstract

A thorough investigation of the pseudomorphic HEMTs was carried out by investigating the effect of the position of the donor layer and/or doping profile in the channel on the device performance. The PM structure's transport properties and presence of interface and bulk traps were investigated. The transistor microwave performance was measured and transconductance was compared for the various transistors. For relaxed geometry HEMTs a typical transconductance of 280mS/mm was measured. © 1990.

Item Type: Article
Authors :
NameEmailORCID
Papaioannou, GUNSPECIFIEDUNSPECIFIED
Roditi, EUNSPECIFIEDUNSPECIFIED
Michelakis, CUNSPECIFIEDUNSPECIFIED
Martin, EUNSPECIFIEDUNSPECIFIED
Hatzopoulos, ZUNSPECIFIEDUNSPECIFIED
Papastamatiou, MUNSPECIFIEDUNSPECIFIED
Kiriakidis, GUNSPECIFIEDUNSPECIFIED
Halkias, GUNSPECIFIEDUNSPECIFIED
Christou, AUNSPECIFIEDUNSPECIFIED
Date : 1 January 1990
Identification Number : https://doi.org/10.1016/0749-6036(90)90260-E
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/835728

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