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Confined states in InGaAs/InAlAs single quantum wells studied by room temperature phototransmitance and electrotransmitance at high electric fields

Dimoulas, A, Georgakilas, A, Halkias, G, Zekentes, C, Michelakis, C and Christou, A (1991) Confined states in InGaAs/InAlAs single quantum wells studied by room temperature phototransmitance and electrotransmitance at high electric fields Institute of Physics Conference Series, 120. pp. 263-266.

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Abstract

Room temperature Phototransmitance and Electrotransmitance have been applied to high quality 50 A and 250 A InxGa1-xAs/In0.52Al0.48As single quantum wells grown by MBE for two nominal In compositions x=0.53 and x=0.6. Several interband excitonic transitions between confined carrier states have been clearly resolved. An observed red shift of the transition energies when an DC electric field is applied perpendicular to the layers, may be attributed to the Quantum Confined Stark Effect.

Item Type: Article
Authors :
NameEmailORCID
Dimoulas, AUNSPECIFIEDUNSPECIFIED
Georgakilas, AUNSPECIFIEDUNSPECIFIED
Halkias, GUNSPECIFIEDUNSPECIFIED
Zekentes, CUNSPECIFIEDUNSPECIFIED
Michelakis, CUNSPECIFIEDUNSPECIFIED
Christou, AUNSPECIFIEDUNSPECIFIED
Date : 1 December 1991
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/835727

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