Electrical transport study of pseudomorphic heterostructures InGaAs-InAlAs on Si and InP substrates

Zekentes, K, Georgakilas, A, Lagadas, M, Michelakis, K, Christou, A, Mercy, JM, Robert, JL and Konczewicz, L (1992) Electrical transport study of pseudomorphic heterostructures InGaAs-InAlAs on Si and InP substrates Sensors and Actuators: A. Physical, 33 (1-2). pp. 67-70.

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Abstract

It is well known that the InGaAs-InAlAs system is a strong candidate for the development of photonic devices. Although it is normally grown on InP substrate, Si substrate would be of great interest due to its processing state of the art. We have used a new approach to grow, by MBE, Inx Ga1-xAs-In0.52Al0.48As modulation-doped heterostructures on InP:Fe and Si substrates. Electrical transport properties were determined from Hall and Shubnikov-de Haas effect measurements. The experimental results confirmed the two-dimensional character of the electron gas and indicated a population of two-electron sub-bands. The presented results prove the possibility of growing high quality InGaAs/InAlAs material on Si substrate that could have very important applications in the field of electronics and sensors. © 1992.

Item Type:	Article
Authors :	Name Email ORCID Zekentes, K Georgakilas, A Lagadas, M Michelakis, K k.michelakis@surrey.ac.uk Christou, A Mercy, JM Robert, JL Konczewicz, L
Date :	1 January 1992
DOI :	10.1016/0924-4247(92)80228-U
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:32
Last Modified :	16 Jan 2019 18:32
URI:	http://epubs.surrey.ac.uk/id/eprint/835726

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