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Reactive ion etching of β-SiC in CCl2F2/O2

Kuzmik, J, Michelakis, C, Konstantinidis, G and Papanicolaou, N (1993) Reactive ion etching of β-SiC in CCl2F2/O2 Electronics Letters, 29 (1). pp. 18-19.

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Abstract

For the first time, the reactive ion etching (RIE) of β-SiC in CCl2F2/O2 gas mixture is reported. The addition of oxygen to the CCl2F2 does not appear to enhance the etch rate, however, the RF power and the DC bias conditions prove to be the dominant factors for controlling the etch rate. In addition, fine line structures with vertical walls and smooth etched surfaces are achieved.

Item Type: Article
Authors :
NameEmailORCID
Kuzmik, JUNSPECIFIEDUNSPECIFIED
Michelakis, CUNSPECIFIEDUNSPECIFIED
Konstantinidis, GUNSPECIFIEDUNSPECIFIED
Papanicolaou, NUNSPECIFIEDUNSPECIFIED
Date : 7 January 1993
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/835725

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