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Schottky contact investigation on reactive ion etched 6H α-SiC

Constantinidis, G, Kuzmik, J and Michelakis, K (1997) Schottky contact investigation on reactive ion etched 6H α-SiC Diamond and Related Materials, 6 (10). pp. 1459-1462.

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Abstract

Reactive Ion Etching (RIE) was performed on monocrystalline 6H α-SiC samples with CF4/H2-based gas mixtures. Schottky contacts on RIE etched α-SiC were compared with reference Schottky contacts on non-etched α-SiC. © 1997 Elsevier Science S.A.

Item Type: Article
Authors :
NameEmailORCID
Constantinidis, GUNSPECIFIEDUNSPECIFIED
Kuzmik, JUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Date : 1 August 1997
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835723

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