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Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates

Bécourt, N, Peiró, F, Cornet, A, Morante, JR, Gorostiza, P, Halkias, G, Michelakis, K and Georgakilas, A (1997) Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates Applied Physics Letters, 71 (20). pp. 2961-2963.

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Abstract

The surface morphology and crystal structure of InAlAs films grown by molecular beam epitaxy on (111)B InP substrates misoriented 1° toward [211] have been investigated. Combined plane view transmission electron microscopy and atomic force microscopy observations have revealed spectacular terracelike topographies, induced by surface step bunching during the growth. Furthermore, cross section transmission electron microscopy analysis has shown the presence of threading dislocations, related to the giant steps, as well as strain inhomogeneities attributed to composition modulation. We have also demonstrated the potential use of the giant steps for local deposition of InAs. © 1997 American Institute of Physics.

Item Type: Article
Authors :
NameEmailORCID
Bécourt, NUNSPECIFIEDUNSPECIFIED
Peiró, FUNSPECIFIEDUNSPECIFIED
Cornet, AUNSPECIFIEDUNSPECIFIED
Morante, JRUNSPECIFIEDUNSPECIFIED
Gorostiza, PUNSPECIFIEDUNSPECIFIED
Halkias, GUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Georgakilas, AUNSPECIFIEDUNSPECIFIED
Date : 17 November 1997
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835722

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