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Schottky contacts on CF4/H2 reactive ion etched β-SiC

Constantinidis, G, Kuzmic, J, Michelakis, K and Tsagaraki, K (1998) Schottky contacts on CF4/H2 reactive ion etched β-SiC Solid-State Electronics, 42 (2). pp. 253-256.

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Abstract

CVD grown n-type β-SiC grown on a (100) Si substrate was reactive ion etched (RIE) in CF4/H2 gas mixtures. The etched surfaces were examined by SEM, FTIR-spectroscopy and AFM. Au Schottky diodes fabricated on the etched surface were compared to reference contacts on the non-etched surface. An oxidation step following the dry etching drastically improves the diode characteristics. © 1998 Elsevier Science Ltd. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
Constantinidis, GUNSPECIFIEDUNSPECIFIED
Kuzmic, JUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Tsagaraki, KUNSPECIFIEDUNSPECIFIED
Date : 16 March 1998
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835720

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