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Material properties of InAlAs layers grown by MBE on vicinal (1 1 1)B InP substrates

Georgakilas, A, Michelakis, K, Kayambaki, M, Tsagaraki, K, Macarona, E, Hatzopoulos, Z, Vila, A, Becourt, N, Peiro, F, Cornet, A , Chrysanthakopoulos, N and Calamiotou, M (1999) Material properties of InAlAs layers grown by MBE on vicinal (1 1 1)B InP substrates Journal of Crystal Growth, 201. pp. 248-251.

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Abstract

InAlAs layers and InGaAs/InAlAs quantum well heterostructures, grown by molecular beam epitaxy on vicinal (1 1 1)B InP substrates, exhibited extensive surface step bunching, compositional inhomogeneities and degraded crystalline quality, with variations depending on the exact misfit strain and growth conditions. Silicon and beryllium doping of (1 1 1) InAlAs behaved similarly to the (1 0 0) case but a different predominant deep level was detected in n-type (1 1 1) material.

Item Type: Article
Authors :
NameEmailORCID
Georgakilas, A
Michelakis, Kk.michelakis@surrey.ac.uk
Kayambaki, M
Tsagaraki, K
Macarona, E
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Date : 1 May 1999
Identification Number : 10.1016/S0022-0248(98)01331-1
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835717

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