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Temperature-graded InAIAs buffers applied on InGaAs/lnAIAs/lnP high electron mobility transistor heterostructures

Arbiol, J, Peiró, F, Cornet, A, Michelakis, K and Georgakilas, A (1999) Temperature-graded InAIAs buffers applied on InGaAs/lnAIAs/lnP high electron mobility transistor heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 (6). pp. 2540-2544.

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Abstract

In this work we studied the possibility of improving InGaAs/InAlAs-on-InP high electron mobility transistor (HEMT) devices by using temperature-graded InAlAs buffer layers with growing temperatures in the range of Tg=250-560°C. Our specimens were grown by molecular beam epitaxy and we analyzed them using plane view and cross-sectional transmission electron microscopy, atomic force microscopy, scanning electron microscopy and Hall effect measurements. We found that growth at the optimum temperature (Tg=530°C) of a thin InAlAs buffer sublayer between the InP substrate and the thick InAlAs buffer layer (grown at low or high Tg) can dramatically improve the crystalline quality of our HEMT devices. Therefore the growth temperature of the buffer could be used as engineering parameter to tailor the electronic properties of InAlAs layers without interfering with the layers' crystalline quality, already assured by the first optimized nanometers. © 1999 American Vacuum Society.

Item Type: Article
Authors :
NameEmailORCID
Arbiol, JUNSPECIFIEDUNSPECIFIED
Peiró, FUNSPECIFIEDUNSPECIFIED
Cornet, AUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Georgakilas, AUNSPECIFIEDUNSPECIFIED
Date : 1 December 1999
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835715

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