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Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400-560 °C: Effects on surface morphology and layer stability

Arbiol, J, Peiró, F, Cornet, A, Morante, JR, Michelakis, K and Georgakilas, A (1999) Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400-560 °C: Effects on surface morphology and layer stability Thin Solid Films, 357 (1). pp. 61-65.

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Abstract

The surface morphology and layer stability of InGaAs/InAlAs/InP heterostructures with their InAlAs buffers grown at temperatures in the range T g = 400-560 °C were studied. Samples with a temperature-graded buffer were compared to those with a homogeneous buffer grown at constant temperature. Results show that, although the bulk of the buffer was grown at low or high T g, the introduction of a few nanometers grown at optimum growth temperature improved the quality of high electron mobility transistor (HEMT) structures.

Item Type: Article
Authors :
NameEmailORCID
Arbiol, JUNSPECIFIEDUNSPECIFIED
Peiró, FUNSPECIFIEDUNSPECIFIED
Cornet, AUNSPECIFIEDUNSPECIFIED
Morante, JRUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Georgakilas, AUNSPECIFIEDUNSPECIFIED
Date : 1 December 1999
Identification Number : 10.1016/S0040-6090(99)00476-9
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835713

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