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Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates

Michelakis, C, Georgakilas, A, Androulidaki, M, Harteros, K, Deligeorgis, G, Calamiotou, M, Peiro, F, Bécourt, N, Cornet, A and Halkias, G (1999) Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 66 (1). pp. 181-184.

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Abstract

The MBE growth and properties of InGaAs/InAlAs heterostructures on vicinal (111)B InP substrates have been investigated. Electroabsorption modulator pin MQW heterostructures were grown on both (100) and vicinal (111)B InP substrates, pin diodes were processed and their photocurrent spectra at 300 K were compared. The spectra of (100) structures exhibited many intense excitonic transitions and applied reverse bias resulted to strong red shift of the absorption edge. The photocurrent spectra of similar (111) structures, however, appeared rather featureless with less abrupt absorption edge. These results on (111) are related to crystal disorder and quantum well variations resulting from InAlAs surface step-bunching and InGaAs, InAlAs compositional modulations.

Item Type: Article
Authors :
NameEmailORCID
Michelakis, CUNSPECIFIEDUNSPECIFIED
Georgakilas, AUNSPECIFIEDUNSPECIFIED
Androulidaki, MUNSPECIFIEDUNSPECIFIED
Harteros, KUNSPECIFIEDUNSPECIFIED
Deligeorgis, GUNSPECIFIEDUNSPECIFIED
Calamiotou, MUNSPECIFIEDUNSPECIFIED
Peiro, FUNSPECIFIEDUNSPECIFIED
Bécourt, NUNSPECIFIEDUNSPECIFIED
Cornet, AUNSPECIFIEDUNSPECIFIED
Halkias, GUNSPECIFIEDUNSPECIFIED
Date : 1 December 1999
Identification Number : https://doi.org/10.1016/S0921-5107(99)00104-X
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/835710

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