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Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

Gaspari, V, Fobelets, K, Velazquez-Perez, JE, Ferguson, R, Michelakis, K, Despotopoulos, S and Papavassilliou, C (2004) Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET Applied Surface Science, 224 (1-4). pp. 390-393.

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Abstract

An investigation of the low-temperature operation of a 0.5 μm-gate Si:SiGe depletion-mode n-type modulation-doped field-effect transistor is presented. The investigated temperatures range from T = 300 to 180 K. The benefits of cryogenic operation are discussed. Experimental indications of parallel conduction in the device are presented, as well as their dependence on operating temperature. Measured data are compared with two-dimensional device simulations in MEDICI™ carried out using mobility values from Monte Carlo material calculations. © 2003 Elsevier B.V. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
Gaspari, VUNSPECIFIEDUNSPECIFIED
Fobelets, KUNSPECIFIEDUNSPECIFIED
Velazquez-Perez, JEUNSPECIFIEDUNSPECIFIED
Ferguson, RUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Despotopoulos, SUNSPECIFIEDUNSPECIFIED
Papavassilliou, CUNSPECIFIEDUNSPECIFIED
Date : 15 March 2004
Identification Number : https://doi.org/10.1016/j.apsusc.2003.08.066
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835706

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