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Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

Fobelets, K, Jeamsaksiri, W, Papavasilliou, C, Vilches, T, Gaspari, V, Velazquez-Perez, JE, Michelakis, K, Hackbarth, T and König, U (2004) Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies Solid-State Electronics, 48 (8). pp. 1401-1406.

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Abstract

The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF performance as given by the cut-off and maximum oscillation frequency is given as a function of input power. The evaluation highlights the current immaturity of the Si:SiGe technologies, where an average HFET shows a maximum transconductance of ∼300 mS/mm and cut-off frequency ∼60 GHz, while the new generation Si nMOS is reaching 1300 mS/mm and 120 GHz respectively. The comparison shows that the strength of the HFETs lies in low power operation (<200 μW). © 2004 Elsevier Ltd. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
Fobelets, KUNSPECIFIEDUNSPECIFIED
Jeamsaksiri, WUNSPECIFIEDUNSPECIFIED
Papavasilliou, CUNSPECIFIEDUNSPECIFIED
Vilches, TUNSPECIFIEDUNSPECIFIED
Gaspari, VUNSPECIFIEDUNSPECIFIED
Velazquez-Perez, JEUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Hackbarth, TUNSPECIFIEDUNSPECIFIED
König, UUNSPECIFIEDUNSPECIFIED
Date : 1 August 2004
Identification Number : 10.1016/j.sse.2004.01.017
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835705

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