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Switching mechanisms in microscale memristors

Prodromakis, T, Michelakis, K and Toumazou, C (2010) Switching mechanisms in microscale memristors Electronics Letters, 46 (1). pp. 63-65.

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Abstract

It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical ROFF/RON ratios. © 2010 The Institution of Engineering and Technology.

Item Type: Article
Authors :
NameEmailORCID
Prodromakis, TUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Toumazou, CUNSPECIFIEDUNSPECIFIED
Date : 11 February 2010
Identification Number : 10.1049/el.2010.2716
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835700

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