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Core structures and kink migrations of partial dislocations in 4H-SiC

Savini, G, Heggie, MI and Öberg, S (2007) Core structures and kink migrations of partial dislocations in 4H-SiC Faraday Discussions, 134. pp. 353-367.

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First-principles calculations are used to investigate the Shockley partial dislocations in 4H-SiC. We show that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active. In particular, the Si(g) 30° partials can explain the optical activation energy for the dislocation glide at ∼2.4 eV above the VB, the narrow peak at 2.87 eV and the broadband at ∼1.8 eV found in photoluminescence spectra. Further, we propose a new model to explain the stability of the symmetric reconstructions and the enhancement of the dislocation velocity in SiC. © The Royal Society of Chemistry.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Savini, G
Öberg, S
Date : 1 January 2007
DOI : 10.1039/b603920k
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:31
Last Modified : 24 Jan 2020 22:24

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