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Electrical activity and migration of 90° partial dislocations in SiC

Savini, G, Heggie, MI, Öberg, S and Briddon, PR (2007) Electrical activity and migration of 90° partial dislocations in SiC New Journal of Physics, 9.

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Abstract

SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

Item Type: Article
Authors :
NameEmailORCID
Savini, GUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Öberg, SUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 17 January 2007
Identification Number : https://doi.org/10.1088/1367-2630/9/1/001
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:31
Last Modified : 17 May 2017 12:31
URI: http://epubs.surrey.ac.uk/id/eprint/835656

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