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Electrical activity and migration of 90° partial dislocations in SiC

Savini, G, Heggie, MI, Öberg, S and Briddon, PR (2007) Electrical activity and migration of 90° partial dislocations in SiC New Journal of Physics, 9.

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SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Savini, G
Öberg, S
Briddon, PR
Date : 17 January 2007
DOI : 10.1088/1367-2630/9/1/001
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:31
Last Modified : 24 Jan 2020 22:24

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