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Partial dislocations under forward bias in SiC

Savini, G, El-Barbary, AA, Heggie, MI and Oberg, S (2007) Partial dislocations under forward bias in SiC Materials Science Forum, 556-55. pp. 279-282.

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Abstract

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.

Item Type: Article
Authors :
NameEmailORCID
Savini, GUNSPECIFIEDUNSPECIFIED
El-Barbary, AAUNSPECIFIEDUNSPECIFIED
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Oberg, SUNSPECIFIEDUNSPECIFIED
Date : 1 December 2007
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:31
Last Modified : 17 May 2017 12:31
URI: http://epubs.surrey.ac.uk/id/eprint/835651

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