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Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

Berhanuddin, DD, Lourenco, MA, Gwilliam, RM and Homewood, KP (2012) Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center ADVANCED FUNCTIONAL MATERIALS, 22 (13). pp. 2709-2712.

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Item Type: Article
Authors :
NameEmailORCID
Berhanuddin, DDUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Date : 10 July 2012
Identification Number : 10.1002/adfm.201103034
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, CHEMISTRY, MULTIDISCIPLINARY, CHEMISTRY, PHYSICAL, MATERIALS SCIENCE, MULTIDISCIPLINARY, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, optically active materials, photoluminescence, photonics, semiconductors, LIGHT-EMITTING DIODE, OPTICAL-PROPERTIES, RAMAN LASER, NANOCRYSTALS, GAIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:30
Last Modified : 17 May 2017 15:04
URI: http://epubs.surrey.ac.uk/id/eprint/835588

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