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Vacancy-type defects created by single-shot and chain ion implantation of silicon

Coleman, PG, Edwardson, CJ, Knights, AP and Gwilliam, RM (2012) Vacancy-type defects created by single-shot and chain ion implantation of silicon NEW JOURNAL OF PHYSICS, 14, ARTN 02500.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Coleman, PGUNSPECIFIEDUNSPECIFIED
Edwardson, CJUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 22 February 2012
Identification Number : 10.1088/1367-2630/14/2/025007
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Multidisciplinary, Physics, PHYSICS, MULTIDISCIPLINARY, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:23
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/835127

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