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Analysis of self-heating in poly-Si thin-film transistors and circuits by a self-consistent electro-thermal simulation approach

Guo, X and Silva, SRP (2007) Analysis of self-heating in poly-Si thin-film transistors and circuits by a self-consistent electro-thermal simulation approach ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. pp. 1398-1400.

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Abstract

This paper investigated the self-heating effects in poly-Si thin-film transistors (TFTs) and circuits) by using a self-consistent electro-thermal simulation approach. The analysis indicates that, for the poly-Si technology, self-heating may lead to a significant degradation of the device's characteristics, and severely impact the circuit performance; therefore, reinforce the need for effective cooling strategies and also accurate device/circuit level models, including electro-thermal coupling effects, for reliable poly-Si TFT circuit design and integration. © 2006 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Guo, XUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Date : 2 August 2007
Identification Number : 10.1109/ICSICT.2006.306195
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:23
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/835090

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