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Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors

Guo, X, Ishii, T and Silva, SRP (2007) Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. pp. 194-196.

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Abstract

This paper investigates the electrical properties and the carrier transport mechanisms of nanometer-scale ultra-thin channel (≤3.0nm) poly-Si transistors to be guidelines for future process on device optimization and modeling. Devices used for the study are fabricated with a precise control over the film thickness down to sub-nanometer scale. © 2006 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Guo, XUNSPECIFIEDUNSPECIFIED
Ishii, TUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Date : 2 August 2007
Identification Number : https://doi.org/10.1109/ICSICT.2006.306136
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:23
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/835089

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