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Molecular and Cluster Ion Beams: Doping and Deposition with "Massive" Ions

Webb, RP, Current, MI, Yamada, I, Mack, M, Gwinn, M and Jacobson, D (2006) Molecular and Cluster Ion Beams: Doping and Deposition with "Massive" Ions In: Ion Implantation Science and Technology. Ion Implantation Technology Co., MD USA, 10-1 - 10-28.

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Abstract

This chapter describes the methods and applications for the use of multi-atom, ionized species, containing 10s to several thousand atoms, for high-flux ion doping and modification of surfaces with sub-keV energies per atom. “Massive” ion beams are formed using molecular species, liquids and gas clusters. Ion beam systems for such “massive” ions include the use of novel vaporizer methods, adiabatic cooling, electron beam ionization, and other techniques to provide stable, high-fluence beams. Applications include high-dose ion implantation for ultra-shallow junctions, room-temperature deposition of semiconductor and other layers, smoothing and high-rate etching of surfaces.

Item Type: Book Section
Authors :
NameEmailORCID
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Current, MIUNSPECIFIEDUNSPECIFIED
Yamada, IUNSPECIFIEDUNSPECIFIED
Mack, MUNSPECIFIEDUNSPECIFIED
Gwinn, MUNSPECIFIEDUNSPECIFIED
Jacobson, DUNSPECIFIEDUNSPECIFIED
Date : 1 June 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:22
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/835021

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