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Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films

Cappellani, A, Keddie, JL, Barradas, NP and Jackson, SM (1999) Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films SOLID-STATE ELECTRONICS, 43 (6). pp. 1095-1099.

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Item Type: Article
Authors :
NameEmailORCID
Cappellani, AUNSPECIFIEDUNSPECIFIED
Keddie, JLj.keddie@surrey.ac.ukUNSPECIFIED
Barradas, NPUNSPECIFIEDUNSPECIFIED
Jackson, SMUNSPECIFIEDUNSPECIFIED
Date : 1 June 1999
Identification Number : https://doi.org/10.1016/S0038-1101(99)00031-3
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, high k dielectrics, thin films sol-gel, ellipsometry, rutherford backscattering, simulated annealing
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:20
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/834916

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