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PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON

THORNTON, J, WEBB, RP, WILSON, IH and PAUS, KC (1988) PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 3 (4). pp. 281-285.

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Item Type: Article
Authors :
NameEmailORCID
THORNTON, JUNSPECIFIEDUNSPECIFIED
WEBB, RPr.webb@surrey.ac.ukUNSPECIFIED
WILSON, IHUNSPECIFIEDUNSPECIFIED
PAUS, KCUNSPECIFIEDUNSPECIFIED
Date : 1 April 1988
Identification Number : https://doi.org/10.1088/0268-1242/3/4/002
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:18
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/834819

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